amplifiers - l ine a r & p ower - chip 3 3 - 1 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC950 v03.0611 general description features functional diagram the hm c950 is a four stage gaas p hem t mmi c 4 w att p ower amplifer which operates between 12 and 16 g h z. the hm c950 provides 28 db of gain, +37 dbm of saturated output power, and 23% p a e from a +7v power supply. the hm c950 exhibits excellent linearity and is optimized for high capacity point to point and point to multi-point radio systems. i t is also ideal for 13.75 to 14.5 g h z ku band v s at transmitters as well as s atc om applications. the amplifer confguration and high gain make it an excellent candidate for last stage signal amplifcation before the antenna. all data is taken with the chip in a 50 o hm test fxture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length. s aturated o utput p ower: +37 dbm @ 23% p a e h igh o utput ip 3: +44.5 dbm h igh gain: 28 db dc s upply: +7v @ 2400 ma n o e xternal m atching r equired die s ize: 3.23 x 3.45 x 0.1 mm electrical specifcations, t a = +25 c vdd = vdd1, vdd2, vdd3, vdd4, vdd5, vdd6, vdd7, vdd8 = +7v, idd = 2400 ma [1] typical applications the hm c950 is ideal for: ? point-to-point radios ? point-to-multi-point radios ? vsat & satcom ? military & space p arameter m in. typ. m ax. m in. typ. m ax. units f requency r ange 12 - 13 13 - 16 g h z gain 26 28 26 28 db gain variation o ver temperature 0.056 0.056 db/ c i nput r eturn l oss 17 16 db o utput r eturn l oss 17 17 db o utput p ower for 1 db compression ( p 1db) 34.5 36.5 34.5 36.5 dbm s aturated o utput p ower ( p sat) 37 37 dbm o utput third o rder i ntercept ( ip 3) [2] 43 44.5 dbm total s upply current ( i dd) 2400 2400 ma [1] adjust vgg between -2 to 0v to achieve i dd = 2400 ma typical. [2] m easurement taken at +7v @ 2400 ma, p out / tone = +24 dbm gaas phemt mmic 4 watt power amplifier, 12 - 16 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 2 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com input return loss vs. temperature output return loss vs. temperature broadband gain & return loss vs. frequency gain vs. temperature p1db vs. temperature p1db vs. supply voltage HMC950 v03.0611 gaas phemt mmic 4 watt power amplifier, 12 - 16 ghz -30 -20 -10 0 10 20 30 40 10 11 12 13 14 15 16 17 18 s21 s11 s22 frequency (ghz) response (db) 16 20 24 28 32 36 11 12 13 14 15 16 17 +25c +85c -55c frequency (ghz) gain (db) -20 -16 -12 -8 -4 0 11 12 13 14 15 16 17 +25c +85c -55c frequency (ghz) return loss (db) -24 -20 -16 -12 -8 -4 0 11 12 13 14 15 16 17 +25c +85c -55c frequency (ghz) return loss (db) 30 32 34 36 38 40 12 13 14 15 16 +25c +85c -55c frequency (ghz) p1db (dbm) 30 32 34 36 38 40 12 13 14 15 16 5v 6v 7v frequency (ghz) p1db (dbm)
amplifiers - l ine a r & p ower - chip 3 3 - 3 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com output ip3 vs. supply current, pout/tone = +24 dbm output ip3 vs. temperature, pout/tone = +24 dbm psat vs. supply current (idd) p1db vs. supply current (idd) HMC950 v03.0611 gaas phemt mmic 4 watt power amplifier, 12 - 16 ghz psat vs. temperature psat vs. supply voltage 30 32 34 36 38 40 12 13 14 15 16 1600 ma 1800 ma 2000 ma 2200 ma 2400 ma frequency (ghz) psat (dbm) 30 35 40 45 50 12 13 14 15 16 +25c +85c -55c frequency (ghz) ip3 (dbm) 30 35 40 45 50 12 13 14 15 16 1600 ma 1800 ma 2000 ma 2200 ma 2400 ma frequency (ghz) ip3 (dbm) 30 32 34 36 38 40 12 13 14 15 16 +25c +85c -55c frequency (ghz) psat (dbm) 30 32 34 36 38 40 12 13 14 15 16 5v 6v 7v frequency (ghz) psat (dbm) 30 32 34 36 38 40 12 13 14 15 16 1600 ma 1800 ma 2000 ma 2200 ma 2400 ma frequency (ghz) p1db (dbm)
amplifiers - l ine a r & p ower - chip 3 3 - 4 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC950 v03.0611 gaas phemt mmic 4 watt power amplifier, 12 - 16 ghz power compression @ 14 ghz reverse isolation vs. temperature output ip3 vs. supply voltage, pout/tone = +24 dbm output im3 @ vdd = +6v output im3 @ vdd = +7v output im3 @ vdd = +5v 30 35 40 45 50 12 13 14 15 16 5v 6v 7v frequency (ghz) ip3 (dbm) 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 26 28 12.5 ghz 13.5 ghz 14.5 ghz 15.5 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 26 28 12.5 ghz 13.5 ghz 14.5 ghz 15.5 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 26 28 12.5 ghz 13.5 ghz 14.5 ghz 15.5 ghz pout/tone (dbm) im3 (dbc) 0 5 10 15 20 25 30 35 40 -12 -9 -6 -3 0 3 6 9 12 15 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) -80 -70 -60 -50 -40 -30 -20 -10 0 16 18 20 22 24 +25c +85c -55c frequency (ghz) isolation (db)
amplifiers - l ine a r & p ower - chip 3 3 - 5 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC950 v03.0611 gaas phemt mmic 4 watt power amplifier, 12 - 16 ghz absolute maximum ratings drain bias voltage (vdd) +8v rf i nput p ower ( rfin ) +27 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 306 m w /c above 85 c) 19.9 w thermal r esistance (channel to die bottom) 3.27 c/ w s torage temperature -65 to +150 c o perating temperature -55 to +85 c vdd (v) idd (ma) +5.0 2400 +6.0 2400 +7.0 2400 note: amplifer will operate over full voltage ranges shown above, vgg adjusted to achieve idd = 2400 ma at +7v typical supply current vs. vdd ele ct ros tat ic sensi t i v e de v ic e o b ser v e h a n d lin g pre caut ions power dissipation gain & power vs. supply voltage @ 14 ghz gain & power vs. supply current @ 14 ghz 20 25 30 35 40 1600 1800 2000 2200 2400 gain p1db psat idd (ma) gain (db), p1db (dbm), psat (dbm) 10 12 14 16 18 20 -12 -9 -6 -3 0 3 6 9 12 15 12 ghz 13 ghz 14 ghz 15 ghz 16 ghz power dissipation (w) input power (dbm) 20 25 30 35 40 5 5.5 6 6.5 7 gain p1db psat vdd (v) gain (db), p1db (dbm), psat (dbm)
amplifiers - l ine a r & p ower - chip 3 3 - 6 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC950 v03.0611 gaas phemt mmic 4 watt power amplifier, 12 - 16 ghz outline drawing no t es : 1. a ll d imensions a re in in c hes [ mm ] 2. d ie t hi ck ness is .004 3. ty pi ca l b on d p ad is .004 s qua re 4. back si d e me ta lli zat ion : g ol d 5. b on d p ad me ta lli zat ion : g ol d 6. back si d e me ta l is g ro u n d. 7. c onne ct ion not re qu ire d for u nl ab ele d b on d p ad s . 8. ov er a ll d ie si z e .002 die packaging information [1] s tandard alternate g p -1 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
amplifiers - l ine a r & p ower - chip 3 3 - 7 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com application circuit pad descriptions HMC950 v03.0611 gaas phemt mmic 4 watt power amplifier, 12 - 16 ghz p ad n umber f unction description i nterface s chematic 1 rfin this pad is dc coupled and matched to 50 o hms over the operating frequency range. 2, 12 vgg1 gate control for amplifer. e xternal bypass capacitors of 100 p f , 0.01 f and 4.7 f are required. the pads are connected on chip. vgg may be applied to either pad 2 or pad 12 3 - 6 8 - 11 vdd1, vdd2, vdd3, vdd4 vdd8, vdd7, vdd6, vdd5 drain bias voltage for the amplifer. e xternal bypass capacitors of 100 p f are required for each pad, followed by common 0.1 f capacitors. 7 rfo ut this pad is dc coupled and matched to 50 o hms. die bottom g n d die bottom must be connected to rf /dc ground.
amplifiers - l ine a r & p ower - chip 3 3 - 8 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com assembly diagram HMC950 v03.0611 gaas phemt mmic 4 watt power amplifier, 12 - 16 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 9 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should be located as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against > 250v es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom - mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. w irebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab HMC950 v03.0611 gaas phemt mmic 4 watt power amplifier, 12 - 16 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 10 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC950 v03.0611 gaas phemt mmic 4 watt power amplifier, 12 - 16 ghz notes:
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